tunnelingfieldeffecttransistor

Tunnel FETs operate by tunneling through the S/D barrier rather than diffusion over the barrier. Two required conditions: • Thin enough barrier over.

由 AM Ionescu 著作 · 2011 · 被引用 2999 次 — Tunnel FETs based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal–oxide– ...

由 R Esfandyarpour 著作 · 被引用 6 次 — In field effect transistors, tunnelling occurs with barriers of thickness around 1-3 nm and smaller in which the gate is controlled via quantum ...

The tunnel field-effect transistor (TFET) is an experimental type of transistor. Even though its structure is very similar to a metal–oxide–semiconductor ...

由 S Kanungo 著作 · 2022 · 被引用 25 次 — The tunneling field-effect transistor (TFET) has emerged as an alternative to nanoscale MOSFET. In TFET design, it is possible to achieve SS ...

由 PK Kumawat 著作 · 2023 · 被引用 2 次 — TFET is a simple p-i-n structure with reversed bias at the gate terminal and works on the principle of the band to band tunneling (BTBT). The basic structure of ...

由 G Nazir 著作 · 2020 · 被引用 54 次 — TFETs successfully demonstrate energy-efficient devices with low SS compared to conventional MOSFETs. However, the low value of on-state current ...

由 D Verreck 著作 · 2016 · 被引用 24 次 — The tunnel field-effect transistor (TFET) is a semicon- ductor device aimed at low-power logic applications that employs band-to-band tunneling (BTBT) as a ...